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  • BSI
    BS IEC 63068-2:2019 Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Test method for defects using optical inspection
    Edition: 2019
    $411.69
    / user per year

Description of BS IEC 63068-2:2019 2019

IEC 63068-2:2019(E) provides definitions and guidance in use of optical inspection for detecting as-grown defects in commercially available 4H-SiC (Silicon Carbide) epitaxial wafers. Additionally, this document exemplifies optical images to enable the detection and categorization of the defects for SiC homoepitaxial wafers. This document deals with a non-destructive test method for the defects so that destructive methods such as preferential etching are out of scope in this document.

 



Standard NumberBS IEC 63068-2:2019
TitleSemiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Test method for defects using optical inspection
StatusDefinitive
Publication Date2019-02-08
Identical National Standard OfIEC 63068-2:2019
DescriptorsInspection, Test methods, Silicon carbide, Defects, Electronic equipment and components, Integrated circuit technology, Semiconductor devices
ICS31.080.99 Other semiconductor devices
CommitteeEPL/47
ISBN978 0 580 51374 9
PublisherBSI
Pages28

About BSI

BSI Group, also known as the British Standards Institution is the national standards body of the United Kingdom. BSI produces technical standards on a wide range of products and services and also supplies certification and standards-related services to businesses.
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