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  • ASTM
    F1388-92(2000) Standard Test Method for Generation Lifetime and Generation Velocity of Silicon Material by Capacitance-Time Measurements of Metal-Oxide-Silicon (MOS) Capacitors (Withdrawn 2003)
    Edition: 2000
    $93.60
    Unlimited Users per year

Description of ASTM-F1388 2000

ASTM F1388-92-Reapproved2000

Withdrawn Standard: Standard Test Method for Generation Lifetime and Generation Velocity of Silicon Material by Capacitance-Time Measurements of Metal-Oxide-Silicon (MOS) Capacitors (Withdrawn 2003)




ASTM F1388

Scope

This standard was transferred to SEMI (www.semi.org) May 2003

1.1 This test method covers the measurement of generation lifetime and generation velocity of silicon wafers.

1.2 The measurement requires the fabrication of a guard-ring MOS (Metal-Oxide-Silicon) capacitor. This test method is therefore destructive to the silicon wafer.

1.3 This test may also be applied to semiconductor materials other than silicon and to insulators other than silicon dioxide, but the details of capacitor fabrication and the analyses and interpretation of data in such cases are not given in this test method.

1.4 Both p- and n-type silicon in the doping range from 1013 to 10 17 cm-3 can be evaluated by this test method. The approximate range of generation lifetime that can be measured is 1µs to 10 ms.

1.5 The test method is applicable to both bulk and epitaxial silicon. If epitaxial silicon is used, the epitaxial layer must be of the same conductivity type as the substrate and should be at least twice as thick as the maximum depletion width in deep depletion to avoid errors caused by the proximity of the epitaxial interface (see 12.4).

1.6 It is necessary to complete the measurements described in Test Method F 1153 before performing the measurements described in this test method to determine the values of maximum capacitance, equilibrium minimum capacitance, and doping density.

1.7 A digital computer capable of controlling the instruments and recording data is required and significantly simplifies and improves the accuracy of the data acquisition and analysis process.

1.8 This standard does not purport to address all of the safety problems, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use. Specific hazard statements are given in 11.5 and 11.8.


Keywords

capacitance-time measurements; C-t measurements; generation lifetime; lifetime; generation velocity; MOS capacitor; silicon


ICS Code

ICS Number Code 31.060.01 (Capacitors in general)


DOI: 10.1520/F1388-92R00

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About ASTM

ASTM International, formerly known as the American Society for Testing and Materials (ASTM), is a globally recognized leader in the development and delivery of international voluntary consensus standards. Today, some 12,000 ASTM standards are used around the world to improve product quality, enhance safety, facilitate market access and trade, and build consumer confidence. ASTM’s leadership in international standards development is driven by the contributions of its members: more than 30,000 of the world’s top technical experts and business professionals representing 150 countries. Working in an open and transparent process and using ASTM’s advanced electronic infrastructure, ASTM members deliver the test methods, specifications, guides, and practices that support industries and governments worldwide.
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